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FDR8508P March 1999 FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features -3.0 A, -30 V. RDS(ON) = 0.052 @ VGS = -10V RDS(ON) = 0.086 @ VGS = -4.5V. Low gate charge. (8nC typical). High performance trench technology for extremely low RDS(ON) High power and current handling capability. Applications Load switch DC/DC converter Motor driving D2 Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. D1 D1 D2 5 6 S2 4 3 2 1 7 8 SuperSOT-8 pin #1 G1 S1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA = 25C unless otherwise noted Parameter FDR8508P -30 (Note 1a) Units V V A W C 20 -3 -20 0.8 -55 to +150 Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 156 40 C/W C/W Package Marking and Ordering Information Device Marking .8508 Device FDR8508P Reel Size 13" Tape Width 12mm Quantity 3000 units 1999 Fairchild Semiconductor Corporation FDR8508P Rev. C FDR8508P Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Min Typ Max Units Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate-Body Leakage Current (Note 2) -30 24 -1 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) / TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -3 A VGS = -10 V, ID = -3 A, TJ = 125C VGS = -4.5 V, ID = -2.3 A VGS = -10 V, VDS = -5 V VDS = -5 V, ID = -3 A -1 -1.8 -4 0.040 0.057 0.058 -3 V mV/C 0.052 0.078 0.086 ID(on) gFS -20 9 A mS Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -15 V, VGS = 0 V, f = 1.0 MHz 750 220 100 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 12 14 24 16 22 25 38 27 12 ns ns ns ns nC nC nC VDS = -15 V, ID = -3A, VGS = -5 V, 8 1.8 3 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A (Note 2) -0.67 -0.75 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the users board design. RJA shown below for single device operation on FR-4 board instill air. 156 C/W when mounted on a 0.0025 in pad of 2oz copper. O 2 Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDR8508P Rev. C FDR8508P Typical Characteristics 20 VGS=-10V -ID, DRAIN CURRENT (A) 16 NORMALIZED ON-RESISTANCE 0.12 -6.0V -4.5V -4.0V 0.1 VGS=-3.5V -4.0V 0.06 -4.5V -5.5V -7.0V 0.04 -10V 12 -3.5V 8 0.08 4 -3.0V 0 0 1 2 3 4 5 0.02 0 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1: On-Region Characteristics Figure 2: On-Resistance Variation vs Drain Current and Gate Voltage 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o 0.2 RDS(ON), ON RESISTANCE (OHM) ID=-3A VGS=-10V ID=-1.5A 0.16 0.12 0.08 TJ=125 C 0.04 o o 0 125 150 0 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3: On-Resistance Variation vs Temperature Figure 4: On-Resistance Variation vs Gate-To-Source Voltage 20 VGS=-5V -ID, DRAIN CURRENT (A) 16 TJ=-55 C 25 o o o 100 -IS, REVERSE DRAIN CURRENT (A) VGS=0 10 1 0.1 0.01 0.001 0.0001 o 125 C 12 TJ=125 C 25 C -55 C o o 8 4 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE VOLTAGE (V) Figure 5: Transfer Characteristics Figure 6: Body Diode Forward Voltage Variation vs Source Current and Temperature FDR8508P Rev. C FDR8508P Typical Characteristics (continued) 10 -VGS, GATE-SOURCE VOLTAGE (V) ID=-3.0A 8 CAPACITANCE (pF) 1200 1000 800 600 400 200 0 Coss Crss VDS=-5V -10V 6 Ciss 4 2 0 0 3 6 9 12 15 0 6 12 18 24 30 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100 100s 1ms POWER (W) 10ms 100ms 1 10s DC 0.1 1s 50 SINGLE PULSE RJA=156 C/W o o -ID, DRAIN CURRENT (A) RDS(ON) 10 40 30 20 10 0.01 0.1 1 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9: Maximum Safe Operating Area Figure 10: Single Pulse Maximum Power Dissipation 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.0001 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse R JA (t) = r(t) * R JA R JA = 135C/W P(pk) t1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.01 0.1 t 1, TIME (sec) 1 10 100 300 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDR8508P Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped w ith 3,000 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 unit s per 7" or 177cm diameter reel. This and some other options are further described in the Packagin g Information table. These full reels are in di vidu ally barcod e labeled and placed inside a standard intermediate box (ill ustrated in figure 1.0) made of recyclable corrugated brow n paper. One box contains two reels maximum. And t hese boxes are placed ins ide a barcode labeled shipp ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d. F63TNR Label Anti static Cover Tape Static Dissi pat ive Emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no f l ow c ode ) D84Z TNR 500 7" Dia 184x187x47 1,000 0.0416 0.0980 TNR 3,000 13" D ia 343x64x343 6,000 0.0416 0.5615 SSOT-8 Unit Orientation 343mm x 342mm x 64mm Intermediate box for Standar d and L99Z Opti ons F63TNR Label F63TNR Label F63TNR Labe l sa mpl e 184mm x 187mm x 47mm Pizza Box fo r D84Z Option F63TNR Label LOT: CBVK741B019 FSID: FDR835N QTY: 3000 SPEC: SSOT-8 Tape Leader and Trailer Configuration: Figur e 2.0 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Traile r Tape 300mm mi nimum or 38 empty pockets Lead er Tape 500mm mi nimum or 62 empty poc kets August 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SSOT-8 (12mm) A0 4.47 +/-0.10 B0 5.00 +/-0.10 W 12.0 +/-0.3 D0 1.55 +/-0.05 D1 1.50 +/-0.10 E1 1.75 +/-0.10 E2 10.25 mi n F 5.50 +/-0.05 P1 8.0 +/-0.1 P0 4.0 +/-0.1 K0 1.37 +/-0.10 T 0.280 +/-0.150 Wc 9.5 +/-0.025 Tc 0.06 +/-0.02 Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Si de or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SSOT-8 Reel Configuration: Figur e 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 12mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 5.906 150 7.00 178 Dim W1 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 Dim W2 0.724 18.4 0.724 18.4 Dim W3 (LSL-USL) 0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4 12mm 13" Dia (c) 1998 Fairchild Semiconductor Corporation July 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SuperSOTTM-8 (FS PKG Code 34, 35) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0416 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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